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Excellent Integrated System LIMITED  

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Excellent Integrated System LIMITED [Hong Kong]


Business Type:Distributor/Wholesaler
Country/Region: Hong Kong

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Integrated Circuit (Total 233 Products)

Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers.
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  • TPSE156M050R0250

TPSE156M050R0250 new

TPSE156M050R0250

solid electrolyte capacitor, 15F, 50V. SMD, 250.0 mOhm, TPSE156M050R0250, AVX

2012-08-17

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  • 2N3055

2N3055 new

2N3055

NPN transistor, 0-28V, 6-8A, TO-3, 2N3055, STMicroelectronics

2012-08-17

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  • IXFN44N50

IXFN44N50 new

IXFN44N50

Power MOSFET, SOT-227B, 520W, 120 mOhm, 44A, 500V

2012-08-17

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  • TEESVA0J106M8R

TEESVA0J106M8R new

TEESVA0J106M8R

Capacitor, 10F, SMD, 3.3V, TEESVA0J106M8R, NEC

2012-08-17

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  • MC9S08GT16ACFBE

MC9S08GT16ACFBE new

MC9S08GT16ACFBE

44-QFP, 8-bit, microcontroller unit

2012-08-17

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  • DS1225Y-200

DS1225Y-200 new

DS1225Y-200

Nonvolatile SRAM, DIP, 64k, -0.3V to +6.0V, Low-power CMOS

2012-08-17

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  • AO4413

AO4413 new

AO4413

Field Effect Transistor, SOIC-8, P-Channel Enhancement Mode, -15 A

2012-08-17

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  • 2SJ116

2SJ116 new

2SJ116

silicon P-channel MOS FET, -400 V, -8 A, low on-resistance, 125 W

2012-08-17

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  • 2SK2605

2SK2605 new

2SK2605

field effect transistor, TO-220, 800 V, 45 W, 5 A, 370 mJ, 1.9Ω

2012-08-17

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  • H21A1

H21A1 new

H21A1

phototransistor optical interrupter switch, DIP, 50 mA, Opaque housing

2012-08-17

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  • ICL7135CN

ICL7135CN new

ICL7135CN

analog-to-digital converter, DIP, dual-slope-integrating, 15 V

2012-08-17

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  • IRFB3077PBF

IRFB3077PBF new

IRFB3077PBF

HEXFET Power MOSFET, TO-220, 210 A, ±20 V, Improved Gate

2012-08-17

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  • IRFB4310

IRFB4310 new

IRFB4310

HEXFET Power MOSFET, TO-220, 140 A, Improved Gate

2012-08-17

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  • C5143

C5143 new

C5143

field effect transistor, TO-3P, 1700 V, 10 A, 50 W, bult-in damper type

2012-08-17

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  • 2N3209

2N3209 new

2N3209

silicon planar epitaxial PNP transistor, -20 V, -10 A, 0.36 W, -200 mA

2012-08-17

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  • 2N4427

2N4427 new

2N4427

NPN overlay transistor, TO-39, 40 V, 0.4 A, 200 K/W, 3.5 W

2012-08-17

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