2SK2605 2SK2605 manufacturer from Hong Kong Excellent Integrated System LIMITED

2SK2605

Price:	0.1~0.2 USD
Payment Terms:	T/T,L/C,WU;PAYPAL
Place of Origin:	USA


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Product Detail

Model No.: 2SK2605

Production Capacity: 20000pcs/month

Delivery Date: IN STOCK

Type: Others

Supply Voltage: Email us

Operating Temperature: Email us

Means of Transport: Air

Packing: TO-220

Application: Others

Brand Name: Toshiba Semiconductor [Tosh...

Dissipation Power: john(at)eis-ic.com

john(at)eis-ic.com: john(at)eis-ic.com

field effect transistor, TO-220, 800 V, 45 W, 5 A, 370 mJ, 1.9Ω

Company Name	Excellent Integrated System LIMITED
Contact Person	John
Email/Msn	John(at)eis-ic.com
Tel	00852-30777742
Add.: RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG

Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question,please email us: john(at)eis-ic.com.

PART NUMBER	2SK2605
BRAND	Toshiba Semiconductor [Toshiba]
PACKAGING	TO-220
DATE CODE	11+
PRICE	0.1~0.2USD
Summary	field effect transistor, TO-220, 800 V, 45 W, 5 A, 370 mJ, 1.9Ω

Description as follow:

The 2SK2605 is a field effect transistor. It is designed for high speed, high voltage switching applications and switching regulator applications.

Parametrics

2SK2605 absolute maximum ratings: (1)drain-source voltage: 800 V; (2)drain-gate voltage (RGS=20kΩ): 800 V; (3)gate-source voltage: ±30 V; (4)drain current: 5 A; (5)drain power dissipation (TC=25℃): 45 W; (6)single pulse avalanche energy: 370 mJ; (7)avalanche current: 5 A; (8)repetitive avalanche energy: 4.5 mJ; (9)channel temperature: 150 ℃; (10)storage temperature range: -55 to 150 ℃.

Features

2SK2605 features: (1)low drain-source ON resistance: RDS(ON)=1.9Ω typ; (2)high forward transfer admittance: Yfs=3.8S typ; (3)low leakage current: IDSS=100μA max (VDS=640V); (4)enhancement-mode: Vth=2.0 to 4.0 V (VDS=10V, ID=1mA).

Diagrams