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Description as follow:

The 2SJ116 is a silicon P-channel MOS FET, which is designed for high speed power switching, high frequency power amplifier.

Parametrics

2SJ116 absolute maximum ratings: (1)drain-source voltage: -400 V; (2)gate-source voltage: ±20 V; (3)drain current: -8 A; (4)drain peak current: -15 A; (5)body-drain diode: -8 A; (6)reverse drain current: -8 A; (7)channel dissipation: 125 W; (8)channel temperature: 150℃; (9)storage temperature: -55 to +150℃.

Features

2SJ116 features: (1)low on-resistance; (2)high speed switching; (3)high cutoff frequency; (4)no secondary breakdown; (5)suitable for switching regulator, DC-DC converter, RF amplifiers, and Ultrasonic power osillators.

Diagrams