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Description as follow:

The IRFB4310 is a HEXFET Power MOSFET. The applications of the IRFB4310 include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.

Parametrics

IRFB4310 absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V A: 140 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 97 A; (3)IDM Pulsed Drain Current: 550 A; (4)PD @TC = 25℃ Maximum Power Dissipation: 330 W; (5)Linear Derating Factor: 2.2 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Peak Diode Recovery: 14 V/ns; (8)Operating Junction and Storage Temperature Range: -55 to +175 ℃.

Features

IRFB4310 features: (1)Worldwide Best RDS(on) in TO-220; (2)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche SOA; (4)Enhanced body diode dV/dt and dI/dt Capabilit.

Diagrams