China stock distributor manufacturer & supplier

TPSE156M050R0250

TPSE156M050R0250

solid electrolyte capacitor, 15F, 50V. SMD, 250.0 mOhm, TPSE156M050R0250, AVX

2012-08-17

2N3055

2N3055

NPN transistor, 0-28V, 6-8A, TO-3, 2N3055, STMicroelectronics

2012-08-17

IXFN44N50

IXFN44N50

Power MOSFET, SOT-227B, 520W, 120 mOhm, 44A, 500V

2012-08-17

TEESVA0J106M8R

TEESVA0J106M8R

Capacitor, 10F, SMD, 3.3V, TEESVA0J106M8R, NEC

2012-08-17

MC9S08GT16ACFBE

MC9S08GT16ACFBE

44-QFP, 8-bit, microcontroller unit

2012-08-17

DS1225Y-200

DS1225Y-200

Nonvolatile SRAM, DIP, 64k, -0.3V to +6.0V, Low-power CMOS

2012-08-17

AO4413

AO4413

Field Effect Transistor, SOIC-8, P-Channel Enhancement Mode, -15 A

2012-08-17

2SJ116

2SJ116

silicon P-channel MOS FET, -400 V, -8 A, low on-resistance, 125 W

2012-08-17

2SK2605

2SK2605

field effect transistor, TO-220, 800 V, 45 W, 5 A, 370 mJ, 1.9Ω

2012-08-17

H21A1

H21A1

phototransistor optical interrupter switch, DIP, 50 mA, Opaque housing

2012-08-17

ICL7135CN

ICL7135CN

analog-to-digital converter, DIP, dual-slope-integrating, 15 V

2012-08-17

IRFB3077PBF

IRFB3077PBF

HEXFET Power MOSFET, TO-220, 210 A, ±20 V, Improved Gate

2012-08-17

IRFB4310

IRFB4310

HEXFET Power MOSFET, TO-220, 140 A, Improved Gate

2012-08-17

C5143

C5143

field effect transistor, TO-3P, 1700 V, 10 A, 50 W, bult-in damper type

2012-08-17

2N3209

2N3209

silicon planar epitaxial PNP transistor, -20 V, -10 A, 0.36 W, -200 mA

2012-08-17

2N4427

2N4427

NPN overlay transistor, TO-39, 40 V, 0.4 A, 200 K/W, 3.5 W

2012-08-17