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BYV32EB-200 

Price: 0.38~0.58 USD 
Payment Terms: T/T,L/C,WU;PAYPAL 
Place of Origin: USA 
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Product Detail

Model No.: BYV32EB-200
Production Capacity: 5000pcs/month
Delivery Date: IN STOCK
Type: Others
Supply Voltage: Email us
Operating Temperature: Email us
Means of Transport: Air
Packing: TO263
Application: Others
Brand Name: NXP Semiconductors [nxp]
Dissipation Power: john(at)eis-ic.com
john(at)eis-ic.com: john(at)eis-ic.com

TO263, rectifier diode, Low forward volt drop, Fast switching, 25 ms, 0.2 A

Company Name: Excellent Integrated System LIMITED
Contact Person : John
Email/Msn    :John(at)eis-ic.com
Tel          : 00852-30777742
Add.: RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG
Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question,please email us: john(at)eis-ic.com.
PART NUMBER
BYV32EB-200
BRAND
NXP Semiconductors [nxp]
PACKAGING
TO263
DATE CODE
10+
PRICE
0.38~0.58USD
Summary
TO263, rectifier diode, Low forward volt drop, Fast switching, 25 ms, 0.2 A
Description as follow:
The BYV32EB-200 is a ultrafast, rugged rectifier diode. The BYV32EB-200 dual, ultra-fast, epitaxial rectifier diode intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32EB-200 is supplied in the SOT78 conventional leaded package.
Parametrics
BYV32EB-200 absolute maximum ratings: (1)IO(AV) Average rectified output current square wave; d = 0.5; Tmb≤115 ℃: 20 A; (2)IFRM Repetitive peak forward current per diode, t = 25 ms; d = 0.5, Tmb≤115 ℃:20 A; (3)IFSM Non-repetitive peak forward, t = 10 ms: 125 A; (4)current per diode t = 8.3 ms, sinusoidal; with reapplied sinusoidal; with reapplied VRWM(max): 137 A; (5)IRRM Repetitive peak reverse current per diode, tp = 2 ms; d = 0.001: 0.2 A; (6)IRSM Non-repetitive peak reverse current per diode, tp = 100 ms: 0.2 A; (7)Tstg Storage temperature: -40 150 ℃; (8)Tj Operating junction temperature: 150 ℃.
Features
BYV32EB-200 features: (1)Low forward volt drop; (2)Fast switching; (3)Soft recovery characteristic; (4)Reverse surge capability; (5)High thermal cycling performance; (6)Low thermal resistance.
Diagrams
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 Mr. John

Tel: 852-30777742
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Company Info

Excellent Integrated System LIMITED [Hong Kong]


Business Type:Distributor/Wholesaler
Country/Region: Hong Kong

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