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Description as follow:

The 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. It is suitable for 10 to 14 watts output power amplifiers in VHF band mobile radio applications.

Parametrics

2SC1972 absolute maximum ratings: (1)VCBO, collector base voltage: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter voltage: 17V; (4)IC, collector current: 3.5A; (5)PC, collector dissipation: 1.5W when Ta=25℃; 25W when Tc=25℃; (6)Tj, junction temperature: 175℃; (7)Tstg, storage temperature: -55 to 175℃; (8)Rth-a, thermal resistance, junction to ambient: 100℃/W; (9)Rth-c, thermal resistance, junction to case: 6℃/W.

Features

2SC1972 features: (1)high power gain: Gpe≥7.5dB @ VCC=13.5V, Po=14W, f=175MHz; (2)emitter ballasted construction, gold metallization for high reliability and good performances; (3)TP-220 package similar is combinient for mounting; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2V, Po=18W, f=175MHz.

Diagrams