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JANTX2N6806Description as follow:

The JANTX2N6806 is a power MOSFET transistor. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The JANTX2N6806 is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Parametrics

JANTX2N6806 absolute maximum ratings: (1)ID @ VGS = 0V, TC = 25℃, Continuous Drain Current: -6.5A; (2)ID @ VGS = 0V, TC = 100℃, Continuous Drain Current: -4.0A; (3)IDM, Pulsed Drain Current: 28W; (4)PD @ TC = 25℃, Max. Power Dissipation: 75 W; (5)Linear Derating Factor: 0.60 W/℃; (6)VGS, Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 66 mJ; (8)IAR, Avalanche Current: -6.5 A; (9)EAR, Repetitive Avalanche Energy: 7.5 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: -5.0 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 150℃; (12)Lead Temperature: 300℃ (0.063 in. (1.6mm) from case for 10s); (13)Weight: 11.5 (typical) g.

Features

JANTX2N6806 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.

Diagrams