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Description as follow:

The VND5N07-TR is a monolithic device designed in STMicroelectronics VIPower M0 technology. The VND5N07-TR is intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

Parametrics

VND5N07-TR absolute maximum ratings: (1)Drain-Source voltage (VINn = 0V):internally clamped; (2)Input voltage:18V; (3)Drain current:internally limited; (4)Reverse DC output current:-7A; (5)Electrostatic discharge (R = 1.5KΩ , C = 100pF):2000V; (6)Total dissipation at Tc = 25℃:60W; (7)Operating junction temperature:internally limited; (8)Case operating temperature:internally limited; (9)Storage temperature:-55 to 150℃.

Features

VND5N07-TR features: (1)Linear current limitation; (2)Thermal shutdown; (3)Short circuit protection; (4)Integrated clamp; (5)Low current drawn from input pin; (6)Diagnostic feedback through input pin; (7)Esd protection; (8)Direct access to the gate of the power mosfet(analog driving); (9)Compatible with standard Power MOSFET.

Diagrams