Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question,please email us: john(at)eis-ic.com.

Description as follow:

The K4T51163QE-ZCE6 is a 512Mb DDR2 SDRAM organized as a 32Mbit x 4 I/Os x 4 banks banks device. This synchronous device K4T51163QE-ZCE6 achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin for general applications. The K4T51163QE-ZCE6 chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

Parametrics

K4T51163QE-ZCE6 absolute maximum ratings: (1)VDD ,Voltage on VDD pin relative to VSS: - 1.0 V to 2.3 V; (2)VDDQ, Voltage on VDDQ pin relative to VSS: - 0.5 V to 2.3 V; (3)VDDL, Voltage on VDDL pin relative to VSS: - 0.5 V to 2.3 V; (4)VIN, VOUT, Voltage on any pin relative to VSS: - 0.5 V to 2.3 V; (5)TSTG, Storage Temperature: -55 to +100℃.

Features

K4T51163QE-ZCE6 features: (1)JEDEC standard 1.8V ± 0.1V Power Supply; (2)VDDQ = 1.8V ± 0.1V; (3)200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb sec/pin; (4)4 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4 , 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment ; (13)On Die Termination; (14)Special Function Support: PASR(Partial Array Self Refresh); 50ohm ODT; High Temperature Self-Refresh rate enable; (15)Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE < 95℃; (16)All of Lead-free products are compliant for RoHS.

Diagrams