JANTX2N2219 JANTX2N2219 manufacturer from Hong Kong Excellent Integrated System LIMITED

Price:	0.5~0.7 USD
Payment Terms:	T/T,L/C,WU;PAYPAL
Place of Origin:	USA


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Product Detail

Model No.: JANTX2N2219

Production Capacity: 20000pcs/month

Delivery Date: IN STOCK

Type: Others

Supply Voltage: Email us

Operating Temperature: Email us

Means of Transport: Air

Packing: TO39

Application: Others

Brand Name: Microsemi Corporation [Micr...

Dissipation Power: john(at)eis-ic.com

john(at)eis-ic.com: john(at)eis-ic.com

NPN Switching silicon transistor, JANTX2N2219, TO39, 30 Vdc, 800 mAdc, 0.8W

Company Name	Excellent Integrated System LIMITED
Contact Person	John
Email/Msn	John(at)eis-ic.com
Tel	00852-30777742
Add.: RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG

Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question,please email us: john(at)eis-ic.com.

PART NUMBER	JANTX2N2219
BRAND	Microsemi Corporation [Microsemi]
PACKAGING	TO39
DATE CODE	11+
PRICE	0.5~0.7USD
Summary	NPN Switching silicon transistor, JANTX2N2219, TO39, 30 Vdc, 800 mAdc, 0.8W

Description as follow:

The JANTX2N2219 is an NPN Switching silicon transistor.

Parametrics

JANTX2N2219 absolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 30 Vdc; (2)Collector-Base Voltage, VCBO: 60 Vdc; (3)Emitter-Base Voltage, VEBO: 5.0 Vdc; (4)Collector Current, IC: Total Power Dissipation, PT: 0.8W at TA=25℃; 3.0W at TC=25℃; (5)Operating & Storage Junction Temp. Range, Top, Tstg: -55 to +200℃.

Features

JANTX2N2219 features: (1)Collector-Emitter Breakdown Voltage, V(BR)CEO: 30 Vdc; (2)Emitter-Base Cutoff Current, IEBO: 10μAdc; (3)Collector-Base Cutoff Current, ICES: 10 ηAdc.

Diagrams